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| MBR835, MBR840, MBR845 Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. http://onsemi.com * * * * * * * High Current Capability Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard-Ring for Stress Protection Low Forward Voltage High Surge Capacity SCHOTTKY BARRIER RECTIFIERS 8.0 AMPERES Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.1 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * * Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 220C Max. for 10 Seconds, 1/16 from case Shipped in plastic bags, 500 per bag Available Tape and Reeled, 1500 per reel, by adding a "RL'' suffix to the part number Polarity: Cathode indicated by Polarity Band ESD Protection: Human Body Model > 4000 V (Class 3) ESD Protection: Machine Model > 400 V (Class C) AXIAL LEAD CASE 267-05 (DO-201AD) STYLE 1 MARKING DIAGRAM MBR8xx MBR8xx = Device Code xx = 35, 40 or 45 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR835 MBR840 MBR845 Average Rectified Forward Current TL = 75C (PsiJL = 12C/W, P.C. Board Mounting, see Note 2) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating and Storage Junction Temperature Range (Reverse Voltage Applied) Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR Max Unit V ORDERING INFORMATION Device MBR835 MBR835RL Package Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead Shipping 500 Units/Bag 1500/Tape & Reel 500 Units/Bag 1500/Tape & Reel 500 Units/Bag 1500/Tape & Reel 35 40 45 8.0 A IO MBR840 MBR840RL MBR845 MBR845RL IFSM 140 A TJ, Tstg -65 to +125 C Preferred devices are recommended choices for future use and best overall value. dv/dt 10 V/ns (c) Semiconductor Components Industries, LLC, 2006 September, 2006 - Rev. 2 1 Publication Order Number: MBR835/D MBR835, MBR840, MBR845 THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction-to-Lead (See Note 2 - Mounting Data) Thermal Resistance - Junction-to-Ambient (See Note 2 - Mounting Data) Symbol RJL RJA 0.9 in x 0.9 in Copper Pad Size 13 50 6.75 in x 6.75 in Copper Pad Size 12 40 Unit C/W ELECTRICAL CHARACTERISTICS (TL = 25C unless otherwise noted) Characteristic Maximum Instantaneous Forward Voltage (Note 1) (iF = 8.0 Amps, TL = 25C) Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 1) TL = 25C TL = 100C 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. Symbol vF iR Max 0.55 mA 1.0 50 Unit V 30 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 30 10 1 125C 100C 75C MBR845 1 100C 125C 25C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS VOLTAGE (VOLTS) 0.8 75C 0.1 25C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS VOLTAGE (VOLTS) 0.8 0.1 Figure 1. Typical Forward Voltage IR, INSTANTANEOUS REVERSE CURRENT (AMPS) Figure 2. Maximum Forward Voltage 1E-01 125C 1E-02 10,000 C, CAPACITANCE (pF) 100C 75C 1E-03 f = 1 MHz TJ = 25C 1000 1E-04 25C 1E-05 1E-06 0 5 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) 45 50 100 0.1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 3. Typical Reverse Current Figure 4. Typical Capacitance http://onsemi.com 2 MBR835, MBR840, MBR845 75 70 COPPER AREA (sq in) 65 60 55 50 45 40 35 30 0 2 4 6 8 10 See Note 2 IF, AVERAGE FORWARD CURRENT (AMPS) 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 SQUARE WAVE RqJL = 12C/W dc RqJA (C/W) TL, LEAD TEMPERATURE (C) Figure 5. RqJA versus Copper Area 4.5 4 PFO, AVERAGE POWER DISSIPATION (WATTS) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 dc SQUARE WAVE TJ = 125C Figure 6. Current Derating - Lead NOTE 2 -- MOUNTING DATA Mounting Method P.C. Board with 6.75 sq. in. copper surface. IO, AVERAGE FORWARD CURRENT (AMPS) Figure 7. Forward Power Dissipation r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.01 P(pk) Copper Area = 0.271 sq. in. RqJA = 61.8 C/W t2 DUTY CYCLE, D = t1/t2 10 100 1000 t1 0.01 SINGLE PULSE 0.0001 0.001 0.01 0.001 0.1 t, TIME (sec) Figure 8. Thermal Response, Junction-to-Ambient http://onsemi.com 3 EE EE EE EE EE EE EE EE 1.0 L = 3/8, Board Ground Plane MBR835, MBR840, MBR845 PACKAGE DIMENSIONS AXIAL LEAD CASE 267-05 (DO-201AD) ISSUE G D K 1 A 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B D K INCHES MIN MAX 0.287 0.374 0.189 0.209 0.047 0.051 1.000 --- MILLIMETERS MIN MAX 7.30 9.50 4.80 5.30 1.20 1.30 25.40 --- B K STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 4 MBR835/D |
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